Electron-Phonon Coupling in Wurtzite Semiconductors: Intervalley Scattering Selection Rules for Hexagonal GaN

摘要

Selection rules are presented for electron-phonon scattering in GaN with thewurtzite crystal structure. The results are obtained for the interbandscattering between the lowest conduction band ($\Gamma$-valley) and the secondconduction band ($U$-valley). These selection rules are derived based on theoriginal group-theoretical analysis of the crystal vibrations in GaN, whichincluded detailed compatibility relations for all phonon modes.